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| Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged GENERAL DESCRIPTION Glass passivated high efficiency rugged dual rectifier diodes in a plastic envelope suitable for surface mounting, featuring low forward voltage drop, ultra-fast recovery times and soft recovery characteristic. These devices can withstand reverse voltage transients and have guaranteed reverse surge and ESD capability. They are intended for use in switched mode power supplies and high frequency circuits in general where low conduction and switching losses are essential. BYQ30EB series QUICK REFERENCE DATA SYMBOL VRRM VF IO(AV) trr IRRM PARAMETER BYQ30EBRepetitive peak reverse voltage Forward voltage Output current (both diodes conducting) Reverse recovery time Repetitive peak reverse current per diode MAX. 100 100 0.95 16 25 0.2 MAX. 150 150 0.95 16 25 0.2 MAX. 200 200 0.95 16 25 0.2 UNIT V V A ns A PINNING - SOT404 PIN 1 2 3 mb DESCRIPTION no connection cathode anode cathode PIN CONFIGURATION mb SYMBOL k tab 2 1 3 a 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IO(AV) IO(RMS) IFRM IFSM PARAMETER Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse voltage Output current (both diodes conducting)1 RMS forward current Repetitive peak forward current per diode Non-repetitive peak forward current per diode square wave = 0.5; Tmb 104 C CONDITIONS MIN. -40 -100 100 100 100 MAX. -150 150 150 150 16 23 16 100 110 50 0.2 0.2 150 150 -200 200 200 200 UNIT V V V A A A A A A2s A A C C I2t IRRM IRSM Tstg Tj t = 25 s; = 0.5; Tmb 104 C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRWM(max) I2t for fusing t = 10 ms Repetitive peak reverse current tp = 2 s; = 0.001 per diode Non-repetitive peak reverse tp = 100 s current per diode Storage temperature Operating junction temperature 1 Neglecting switching and reverse current losses. October 1997 1 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged ESD LIMITING VALUE SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage CONDITIONS Human body model; C = 250 pF; R = 1.5 k BYQ30EB series MIN. - MAX. 8 UNIT kV THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS per diode both diodes conducting minimum footprint, FR4 board MIN. TYP. 50 MAX. 3.0 2.5 UNIT K/W K/W K/W STATIC CHARACTERISTICS Tj = 25 C unless otherwise stated SYMBOL VF IR PARAMETER Forward voltage (per diode) Reverse current (per diode) CONDITIONS IF = 8 A; Tj = 150C IF = 16 A; Tj = 150C IF = 16 A; VR = VRWM; Tj = 100 C VR = VRWM MIN. TYP. 0.83 1.0 0.98 0.3 2 MAX. 0.95 1.15 1.25 0.6 30 UNIT V V mA A DYNAMIC CHARACTERISTICS Tj = 25 C unless otherwise stated SYMBOL Qs trr Irrm Vfr PARAMETER Reverse recovery charge (per diode) Reverse recovery time (per diode) Peak reverse recovery current (per diode) Forward recovery voltage (per diode) CONDITIONS IF = 2 A; VR 30 V; -dIF/dt = 20 A/s IF = 1 A; VR 30 V; -dIF/dt = 100 A/s IF = 1 A; VR 30 V; -dIF/dt = 50 A/s; Tj = 100 C IF = 1 A; dIF/dt = 10 A/s MIN. TYP. 4 20 1.0 1 MAX. 11 25 2 UNIT nC ns A V October 1997 2 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged BYQ30EB series I dI F dt F 12 10 Forward dissipation, PF (W) BYQ30 Vo = 0.75 V Rs 0.025 Ohms Tmb(max) / C 114 120 t a = 1.57 rr time 8 2.8 6 4 4 1.9 2.2 126 132 138 144 150 8 Q I R I s 10% 100% 2 0 rrm 0 1 2 3 4 5 6 Average forward current, IF(AV) (A) 7 Fig.1. Definition of trr, Qs and Irrm Fig.4. Maximum forward dissipation PF = f(IF(AV))per diode; sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). trr / ns 1000 I F 100 IF=10A time IF=1A VF V VF time fr 10 1 1 10 dIF/dt (A/us) 100 Fig.2. Definition of Vfr Fig.5. Maximum trr at Tj = 25 C. 12 10 8 6 4 2 Forward dissipation, PF (W) BYQ30 Vo = 0.75 V Rs = 0.025 Ohms 0.5 0.2 0.1 I tp Tmb(max) / C D = 1.0 trr / ns 114 120 126 132 1000 100 IF=10A IF=1A D= tp T t 138 144 150 12 10 T 0 0 2 4 6 8 Average forward current, IF(AV) (A) 10 1 1 10 dIF/dt (A/us) 100 Fig.3. Maximum forward dissipation PF = f(IF(AV)) per diode; square current waveform where IF(AV) =IF(RMS) x D. Fig.6. Maximum trr at Tj = 100 C. October 1997 3 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged BYQ30EB series 10 Irrm / A 100 Qs / nC IF=10A 1 IF=1A IF=10A 5A 2A 1A 10 0.1 0.01 1 10 -dIF/dt (A/us) 100 1.0 1.0 10 -dIF/dt (A/us) 100 Fig.7. Maximum Irrm at Tj = 25 C. Fig.10. Maximum Qs at Tj = 25 C. 10 Irrm / A 10 Transient thermal impedance, Zth j-mb (K/W) IF=10A 1 IF=1A 1 0.1 0.1 P D tp t 0.01 1 10 -dIF/dt (A/us) 100 0.01 10 us 1 ms 0.1 s pulse width, tp (s) 10 s Fig.8. Maximum Irrm at Tj = 100 C. Fig.11. Transient thermal impedance; Zth j-mb = f(tp). 20 Forward current, IF (A) Tj = 25 C Tj = 150 C BYQ30 15 10 typ 5 max 0 0 0.5 1 1.5 Forward voltage, VF (V) 2 Fig.9. Typical and maximum forward characteristic IF = f(VF); parameter Tj October 1997 4 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged MECHANICAL DATA Dimensions in mm Net Mass: 1.4 g 10.3 max 4.5 max 1.4 max BYQ30EB series 11 max 15.4 2.5 0.85 max (x2) 2.54 (x2) 0.5 Fig.12. SOT404 : centre pin connected to mounting base. Notes 1. Epoxy meets UL94 V0 at 1/8". MOUNTING INSTRUCTIONS Dimensions in mm 11.5 9.0 17.5 2.0 3.8 5.08 Fig.13. SOT404 : minimum pad sizes for surface mounting. Notes 1. Plastic meets UL94 V0 at 1/8". October 1997 5 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged DEFINITIONS Data sheet status Objective specification Product specification Limiting values BYQ30EB series This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. October 1997 6 Rev 1.000 |
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